power mosfet IRF830 features ? dynamic dv/dt rating ? repetitive avalanche rated ? fast switching ? ease of paralleling ? simple drive requirements ? lead (pb)-free available description the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 w. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. v dd = 50 v, starting t j = 25 c, l = 24 mh, r g = 25 , i as = 4.5 a (see fig. 12). c. i sd 4.5 a, di/dt 75 a/s, v dd v ds , t j 150 c. d. 1.6 mm from case. product summary v ds (v) 500 r ds(on) ( )v gs = 10 v 1.5 q g (max.) (nc) 38 q gs (nc) 5.0 q gd (nc) 22 configuration single n -channel mosfet g d s to-220 ordering information package to-220 lead (pb)-free IRF830pbf sihf830-e3 snpb IRF830 sihf830 absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 500 v gate-source voltage v gs 20 continuous drain current v gs at 10 v t c = 25 c i d 4.5 a t c = 100 c 2.9 pulsed drain current a i dm 18 linear derating factor 0.59 w/c single pulse avalanche energy b e as 280 mj repetitive avalanche current a i ar 4.5 a repetitive avalanche energy a e ar 7.4 mj maximum power dissipation t c = 25 c p d 74 w peak diode recovery dv/dt c dv/dt 3.5 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m 2014-8-9 1 www.kersemi.com
notes a. repetitive rating; pulse width limited by maximum junction temper ature (see fig. 11). b. pulse width 300 s; duty cycle 2 %. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w case-to-sink, flat, greased surface r thcs 0.50 - maximum junction-to-case (drain) r thjc -1.7 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 500 - - v v ds temperature coefficient v ds /t j reference to 25 c, i d = 1 ma - 0.61 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 500 v, v gs = 0 v - - 25 a v ds = 400 v, v gs = 0 v, t j = 125 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 2.7 a b -- 1.5 forward transconductance g fs v ds = 50 v, i d = 2.7 a b 2.5 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 -610- pf output capacitance c oss -160- reverse transfer capacitance c rss -68- total gate charge q g v gs = 10 v i d = 3.1 a, v ds = 400 v, see fig. 6 and 13 b --38 nc gate-source charge q gs --5.0 gate-drain charge q gd --22 turn-on delay time t d(on) v dd = 250 v, i d = 3.1 a r g = 12 , r d = 79 , see fig. 10 b -8.2- ns rise time t r -16- turn-off delay time t d(off) -42- fall time t f -16- internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact -4.5- nh internal source inductance l s -7.5- drain-source body diode characteristics continuous source-drain diode current i s mosfet symbol showing the integral reverse p - n junction diode --4.5 a pulsed diode forward current a i sm --18 body diode voltage v sd t j = 25 c, i s = 4.5 a, v gs = 0 v b -- 1.6 v body diode reverse recovery time t rr t j = 25 c, i f = 3.1 a, di/dt = 100 a/s b - 320 640 ns body diode reverse recovery charge q rr - 1.0 2.0 c forward turn-on time t on intrinsic turn-on time is negli gible (turn-on is dominated by l s and l d ) d s g s d g IRF830 2014-8-9 2 www.kersemi.com
typical characteristics 25 c, unless otherwise noted fig. 1 - typical output characteristics, t c = 25 c fig. 2 - typical output characteristics, t c = 150 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature 91063_01 10 1 10 0 10 -1 10 0 10 1 v ds , drain-to-so u rce v oltage ( v ) bottom to p v gs 15 v 10 v 8 .0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.5 v 20 s p u lse w idth t c = 25 c i d , drain c u rrent (a) 4.5 v 91063_02 10 1 10 0 10 -1 10 0 10 1 v ds , drain-to-so u rce v oltage ( v ) i d , drain c u rrent (a) 4.5 v bottom to p v gs 15 v 10 v 8 .0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.5 v 20 s p u lse w idth t c = 150 c 20 s p u lse w idth v ds = 50 v 91063_03 10 1 10 0 10 -1 i d , drain c u rrent (a) v gs , gate-to-so u rce v oltage ( v ) 56 7 8 910 4 25 c 150 c i d = 3.1 a v gs = 10 v 91063_04 3.0 0.0 0.5 1.0 1.5 2.0 2.5 - 60 - 40 - 20 0 20 40 60 8 0 100 120 140 160 t j , j u nction temperat u re ( c) r ds(on) , drain-to-so u rce on resistance ( n ormalized) IRF830 2014-8-9 3 www.kersemi.com
fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. drain-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area 91063_05 1500 1250 1000 750 0 250 500 10 0 10 1 capacitance (pf) v ds , drain-to-so u rce v oltage ( v ) c iss c rss c oss v gs = 0 v , f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 91063_06 q g , total gate charge (nc) v gs , gate-to-so u rce v oltage ( v ) 20 16 12 8 0 4 0 8 40 32 24 16 i d = 3.1 a v ds = 100 v v ds = 250 v for test circ u it see fig u re 13 v ds = 400 v 91063_07 10 1 10 0 v sd , so u rce-to-drain v oltage ( v ) i sd , re v erse drain c u rrent (a) 0.4 1.2 1.0 0. 8 0.6 25 c 150 c v gs = 0 v 91063_0 8 10 s 100 s 1 ms 10 ms operation in this area limited b y r ds(on) v ds , drain-to-so u rce v oltage ( v ) i d , drain c u rrent (a) t c = 25 c t j = 150 c single p u lse 10 -2 10 2 0.1 2 5 0.1 2 5 1 2 5 10 2 5 25 1 25 10 25 10 2 25 10 3 25 10 4 IRF830 2014-8-9 4 www.kersemi.com
fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case fig. 12a - unclamped inductive test circui t fig. 12b - unclamped inductive waveforms 91063_09 i d , drain c u rrent (a) t c , case temperat u re (c) 0.0 1.0 2.0 3.0 4.0 5.0 25 150 125 100 75 50 p u lse w idth 1 s d u ty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f 10 91063_11 1 0.1 10 -2 10 -5 10 -4 10 -3 10 -2 0.1 1 10 p dm t 1 t 2 t 1 , rectang u lar p u lse d u ration (s) thermal response (z th jc ) n otes: 1. d u ty factor, d = t 1 /t 2 2. peak t j = p dm x z thjc + t c single p u lse (thermal response) 0 - 0.5 0.2 0.1 0.05 0.02 0.01 r g i as 0.01 t p d.u.t l v ds + - v dd a 10 v v ary t p to o b tain re qu ired i as i as v ds v dd v (br)dss t p IRF830 IRF830 2014-8-9 5 www.kersemi.com
fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit 91063_12c 600 0 100 200 300 400 500 25 150 125 100 75 50 starting t j , j u nction temperat u re (c) e as , single p u lse energy (mj) bottom to p i d 2.0 a 2. 8 a 4.5 a v dd = 50 v q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v c u rrent reg u lator c u rrent sampling resistors same type as d.u.t. + - IRF830 2014-8-9 6 www.kersemi.com
fig. 14 - for n-channel p. w . period di/dt diode reco v ery d v /dt ripple 5 % body diode for w ard drop re-applied v oltage re v erse reco v ery c u rrent body diode for w ard c u rrent v gs = 10 v * v dd i sd dri v er gate dri v e d.u.t. i sd w a v eform d.u.t. v ds w a v eform ind u ctor c u rrent d = p. w . period + - + + + - - - * v gs = 5 v for logic le v el de v ices peak diode recovery dv/dt test circuit v dd ? d v /dt controlled b y r g ? dri v er same type as d.u.t. ? i sd controlled b y d u ty factor "d" ? d.u.t. - de v ice u nder test d.u.t circ u it layo u t considerations ? lo w stray ind u ctance ? gro u nd plane ? lo w leakage ind u ctance c u rrent transformer r g IRF830 2014-8-9 7 www.kersemi.com
|
